Random Telegraph Noise in 3D NAND Flash Memories
نویسندگان
چکیده
منابع مشابه
Reliability of 3D NAND Flash Memories
Reliability represents one of the major antagonist towards the unstoppable technological evolution of hyperscaled NAND memories, since the correct operations must be assured throughout the entire lifetime. In particular, the ability of keeping unaltered the stored information even after a consistent number of write operations and for long times must be guaranteed. A growth of the memory devices...
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Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs) in consumer and enterprise scenarios. To keep the evolutionary pace of the technology, NAND Flash must scale aggressively in terms of bit cost. Whe...
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This paper presents a new technique to analyze the characteristics of multi-level random telegraph noise (RTN). RTN is de ned as an abrupt switching of either the current or the voltage between discrete values as a result of trapping/de-trapping activity. RTN signal properties are deduced exploiting a factorial hidden Markov model (FHMM). The proposed method considers the measured multi-level R...
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We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. ...
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Nand flash memory is an important part of the electronics products. Over the years scientists and engineers have worked hard to make it faster and cost effective. Recently, there has been a realization that current technologies is not capable of further increasing their capacity and at the same time keep the cost down. Keeping in view this limit and the ever increasing need for Nand flash memor...
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ژورنال
عنوان ژورنال: Micromachines
سال: 2021
ISSN: 2072-666X
DOI: 10.3390/mi12060703